W25Q80BWSSIG【PDF 40/74 页】IC FLASH SPI 8MBIT 8SOIC

您好，
买卖IC网欢迎您。
请登录
免费注册

36页 37页 38页 39页 [40页]41页 42页 43页 44页

W25Q80BW

7.2.22

Quad Input Page Program (32h)

The Quad Page Program instruction allows up to 256 bytes of data to be programmed at previously

erased (FFh) memory locations using four pins: IO 0 , IO 1 , IO 2 , and IO 3 . The Quad Page Program can

improve performance for PROM Programmer and applications that have slow clock speeds <5MHz.

Systems with faster clock speed will not realize much benefit for the Quad Page Program instruction

since the inherent page program time is much greater than the time it take to clock-in the data.

To use Quad Page Program the Quad Enable in Status Register-2 must be set (QE=1). A Write Enable

instruction must be executed before the device will accept the Quad Page Program instruction (Status

Register-1, WEL=1). The instruction is initiated by driving the /CS pin low then shifting the instruction

code “32h” followed by a 24 -bit address (A23-A0) and at least one data byte, into the IO pins. The /CS pin

must be held low for the entire length of the instruction while data is being sent to the device. All other

functions of Quad Page Program are identical to standard Page Program. The Quad Page Program

instruction sequence is shown in figure 20.

/CS

Mode 3

0

1

2

3

4

5

6

7

8

9

10

28

29

30

31

CLK

Mode 0

Instruction (32h)

24-Bit Address

IO 0

23

22

21

3

2

1

0

*

IO 1

IO 2

IO 3

* = MSB

/CS

31

32

33

34

35

36

37

Mode 3

CLK

Mode 0

Byte 1

Byte 2

Byte 3

Byte

253

Byte

254

Byte

255

Byte

256

IO 0

IO 1

IO 2

IO 3

0

4

5

6

7

0

1

2

3

4

5

6

7

0

1

2

3

4

5

6

7

0

1

2

3

4

5

6

7

0

1

2

3

4

5

6

7

0

1

2

3

4

5

6

7

0

1

2

3

4

5

6

7

0

1

2

3

*

*

*

*

*

*

*

Figure 20. Quad Input Page Program Instruction Sequence Diagram

- 40 -

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

我的联系方式

*

*

*

相关PDF资料

W25X40BVZPIG IC SPI FLASH 4MBIT 8WSON

W25X64VZEIG IC FLASH 64MBIT 75MHZ 8WSON

W25X80AVDAIZ IC FLASH 16MBIT 100MHZ 8DIP

W29GL032CB7A IC FLASH 32MBIT 70NS 48TFBGA

W29GL064CB7S IC FLASH 64MBIT 70NS 48TSOP

W29GL128CL9T IC FLASH 128MBIT 90NS 56TSOP

W631GG6KB-15 IC DDR3 SDRAM 1GBIT 96WBGA

W9412G6IH-5 IC DDR-400 SDRAM 128MB 66TSSOPII

相关代理商/技术参数

W25Q80BWSSIP 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

W25Q80BWUXIG 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

W25Q80BWUXIP 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

W25Q80BWZPIG 功能描述:IC FLASH SPI 8MBIT 8WSON RoHS:是类别:集成电路 (IC) >> 存储器系列:SpiFlash® 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（单线）电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP，8-MSOP（0.118"，3.00mm 宽）供应商设备封装:8-MSOP 包装:带卷 (TR)

W25Q80BWZPIG TR 功能描述:IC FLASH SPI 8MBIT 8WSON RoHS:是类别:集成电路 (IC) >> 存储器系列:SpiFlash® 标准包装:2,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 异步存储容量:256K (32K x 8) 速度:15ns 接口:并联电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:28-TSSOP（0.465"，11.8mm 宽）供应商设备封装:28-TSOP 包装:带卷 (TR) 其它名称:71V256SA15PZGI8

W25Q80BWZPIP 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

W25S243A 制造商:WINBOND 制造商全称:Winbond 功能描述:64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM

W25S243A-12 制造商:WINBOND 制造商全称:Winbond 功能描述:64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM